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1

Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates

Jürgen Berntgen, Alexander Behres, Jürgen Kluth, Klaus Heime, Walter Daumann, Uwe Auer, Franz-Josef Tegude

Journal:

Microelectronics Reliability

Année:

2000

Langue:

english

Fichier:

PDF, 135 KB

english, 2000

2

[IEEE 1995 IEEE MTT-S International Microwave Symposium - Orlando, FL, USA (16-20 May 1995)] Proceedings of 1995 IEEE MTT-S International Microwave Symposium - Design methodology, measurement and application of MMIC transmission line transformers

Engels, M., Jansen, R.H., Daumann, W., Bertenburg, R.M., Tegude, F.J.

Année:

1995

Langue:

english

Fichier:

PDF, 746 KB

english, 1995

3

[IEEE ICMTS 2002. 2002 International Conference on Microelectronic Test Structures - Cork, Ireland (8-11 April 2002)] Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. - A consistent and scalable PSPICE HFET-Model for DC- and S-parameter-simulation

Ehrich, S., Bertenburg, R.M., Agethen, M., Brennemann, A., Brockerhoff, W., Tegude, F.-J.

Année:

2002

Langue:

english

Fichier:

PDF, 161 KB

english, 2002

4

Metalorganic vapor phase epitaxial grown heterointerfaces to GaInP with group-III and group-V exchange

W. Prost, F. Scheffer, Q. Liu, A. Lindner, H. Lakner, I. Gyuro, F.J. Tegude

Journal:

Journal of Crystal Growth

Année:

1995

Langue:

english

Fichier:

PDF, 398 KB

english, 1995

5

Coplanar microwave phase shifter for InP-based MMICs

M. Dragoman, M. Block, R. Kremer, F. Buchali, F.J. Tegude, D. Jäger

Journal:

Microelectronic Engineering

Année:

1992

Langue:

english

Fichier:

PDF, 175 KB

english, 1992

6

Surface-recombination-free InGaAs/InP HBTs and the base contact recombination

Z. Jin, X. Liu, W. Prost, F.-J. Tegude

Journal:

Solid-State Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 184 KB

english, 2008

7

MMIC in-circuit and in-device testing with an on-wafer high frequency electric force microscope test system

A. Leyk, S. Van Waasen, F.J. Tegude, E. Kubalek

Journal:

Microelectronics Reliability

Année:

1997

Langue:

english

Fichier:

PDF, 361 KB

english, 1997

8

Monodisperse aerosol particle deposition: Prospects for nanoelectronics

W. Prost, F.E. Kruis, F. Otten, K. Nielsch, B. Rellinghaus, U. Auer, A. Peled, E.F. Wassermann, H. Fissan, F.J. Tegude

Journal:

Microelectronic Engineering

Année:

1998

Langue:

english

Fichier:

PDF, 386 KB

english, 1998

9

Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer

Heedt, C., Buchali, F., Prost, W., Brockerhoff, W., Fritzsche, D., Nickel, H., Losch, R., Schlapp, W., Tegude, F.-J.

Journal:

IEEE Transactions on Electron Devices

Année:

1994

Langue:

english

Fichier:

PDF, 605 KB

english, 1994

10

Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET

Reuter, R., Agethen, M., Auer, U., van Waasen, S., Peters, D., Brockerhoff, W., Tegude, F.-J.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Année:

1997

Langue:

english

Fichier:

PDF, 262 KB

english, 1997

11

27-GHz bandwidth high-speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET traveling wave amplifier

van Waasen, S., Umbach, A., Auer, U., Bach, H.-G., Bertenburg, R.M., Janssen, G., Mekonnen, G.G., Passenberg, W., Reuter, R., Schlaak, W., Schramm, C., Unterborsch, G., Wolfram, P., Tegude, F.-J.

Journal:

IEEE Journal of Solid-State Circuits

Année:

1997

Langue:

english

Fichier:

PDF, 230 KB

english, 1997

12

[IEEE 25th European Microwave Conference, 1995 - Bologna, Italy (1995.10.4-1995.10.6)] 25th European Microwave Conference, 1995 - A new temperature noise model of HFET with special emphasis on a gate-leakage current and investigation of the bias dependence of the equivalent noise sources

Reuter, R, van Waasen, St, Peters, D, Auer, U, Brockerhoff, W, Tegude, F J

Année:

1995

Langue:

english

Fichier:

PDF, 6.56 MB

english, 1995

13

[IEEE 2007 European Microwave Integrated Circuit Conference - Munich, Germany (2007.10.8-2007.10.10)] 2007 European Microwave Integrated Circuit Conference - Large-signal analysis and AC modelling of sub micron resonant tunnelling diodes

Matiss, A., Poloczek, A., Brockerhoff, W., Prost, W., J. Tegude, F.-

Année:

2007

Langue:

english

Fichier:

PDF, 1.09 MB

english, 2007

14

[IEEE International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA (12-16 May 2003)] International Conference onIndium Phosphide and Related Materials, 2003. - Growth of highly p-type doped GaAsSb:C for HBT application

Neumann, S., Prost, W., Tegude, F.-J.

Année:

2003

Langue:

english

Fichier:

PDF, 221 KB

english, 2003

15

[IEEE 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192) - Baltimore, MD, USA (7-12 June 1998)] 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192) - Distributed velocity-matched 1.55 μm InP travelling-wave photodetector for generation of high millimeterwave signal power

Alles, M., Auer, U., Tegude, F.-J., Jager, D.

Année:

1998

Langue:

english

Fichier:

PDF, 370 KB

english, 1998

16

[IEEE GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - Orlando, FL, USA (3-6 Nov. 1996)] GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 - 27 GHz bandwidth high speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET-traveling wave amplifier

van Waasen, S., Umbach, A., Auer, U., Back, H.-G., Bertenburg, R.M., Mekonnen, G.G., Passenberg, W., Reuter, R., Schlaak, W., Schramm, C., Unterborsch, G., Wolfram, P., Tegude, F.J.

Année:

1996

Langue:

english

Fichier:

PDF, 471 KB

english, 1996

17

[IEEE Related Materials (IPRM) - Newport Beach, CA, USA (2009.05.10-2009.05.14)] 2009 IEEE International Conference on Indium Phosphide & Related Materials - Wavelength-selective receiver for simultaneous λ=1.3 µm and λ=1.55 µm RF optical transmission

Poloczek, Artur, Munstermann, Benjamin, Nannen, Ingo, Regolin, Ingo, Tegude, Franz-Josef

Année:

2009

Langue:

english

Fichier:

PDF, 526 KB

english, 2009

18

[IEEE 1996 54th Annual Device Research Conference Digest - Santa Barbara, CA, USA (24-26 June 1996)] 1996 54th Annual Device Research Conference Digest - 27 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifier

Umbach, A., Passenberg, W., Unterborsch, G., Mekonnen, G.G., Schlaak, W., Schramm, C., Ebert, W., Wolfram, P., Bach, H.-G., van Waasen, S., Bertenburg, R.M., Janssen, G., Reuter, R., Auer, U., Tegude,

Année:

1996

Langue:

english

Fichier:

PDF, 219 KB

english, 1996

19

Planar-defect characteristics and cross-sections of 〈001〉, 〈111〉, and 〈112〉 InAs nanowires

Z. Li, C. Möller, V. Migunov, M. Spasova, M. Farle, A. Lysov, C. Gutsche, I. Regolin, W. Prost, F. Tegude, P. Ercius

Année:

2011

Langue:

english

Fichier:

PDF, 2.29 MB

english, 2011

20

[IEEE 2007 IEEE International Conference on Ultra-Wideband - Singapore (2007.09.24-2007.09.26)] 2007 IEEE International Conference on Ultra-Wideband - Sub-Nanosecond Pulse Generation using Resonant Tunneling Diodes for Impulse Radio

Matiss, A., Poloczek, A., Stohr, A., Brockerhoff, W., Prost, W., Tegude, F.-J.

Année:

2007

Langue:

english

Fichier:

PDF, 4.16 MB

english, 2007

21

[IEEE 2008 38th European Microwave Conference (EuMC) - Amsterdam, Netherlands (2008.10.27-2008.10.31)] 2008 38th European Microwave Conference - Large-Signal Performance of Resonant Tunnelling Diodes in K-Band Oscillators

Munstermann, B., Matiss, A., Brockerhoff, W., Tegude, F.-J.

Année:

2008

Langue:

english

Fichier:

PDF, 707 KB

english, 2008

22

[IEEE 2008 European Microwave Integrated Circuit Conference (EuMIC) - Amsterdam, Netherlands (2008.10.27-2008.10.28)] 2008 European Microwave Integrated Circuit Conference - Large-Signal Performance of Resonant Tunnelling Diodes in K-Band Oscillators

Munstermann, B., Matiss, A., Brockerhoff, W., Tegude, F.-J.

Année:

2008

Langue:

english

Fichier:

PDF, 707 KB

english, 2008

23

[IEEE 28th European Microwave Conference, 1998 - Amsterdam, Netherlands (1998.10.4-1998.10.6)] 28th European Microwave Conference, 1998 - A New Consistent RF-and Noise Model with Special Emphasis on Impact Ionisation for Dual-Gate HFET in Cascode Configuration

Breder, T., Reuter, R., Daumann, W., Schreurs, D., van der Zanden, K., Brockerhoff, W., Tegude, F.J.

Année:

1998

Langue:

english

Fichier:

PDF, 4.43 MB

english, 1998

24

[IEEE 2013 71st Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2013.06.23-2013.06.26)] 71st Device Research Conference - III-V-Semiconductor nanowires for the fabrication of optoelectronic and electronic devices

Année:

2013

Langue:

english

Fichier:

PDF, 543 KB

english, 2013

25

Electrical characterization and transport model of n-gallium nitride nanowires

Benner, O., Blumberg, C., Arzi, K., Poloczek, A., Prost, W., Tegude, F.-J.

Journal:

Applied Physics Letters

Année:

2015

Langue:

english

Fichier:

PDF, 998 KB

english, 2015

26

[IEEE 8th International Conference on Indium Phosphide and Related Materials - Schwabisch-Gmund, Germany (21-25 April 1996)] Proceedings of 8th International Conference on Indium Phosphide and Related Materials - Characterization and analysis of a new gate leakage mechanism at high drain bias in InAlAs/InGaAs heterostructure field-effect transistors

Auer, U., Reuter, R., Ellrodt, P., Prost, W., Tegude, F.J.

Année:

1996

Fichier:

PDF, 6 KB

1996

27

The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAl As/InGaAs heterostructure field-effect transistors

U. Auer, R. Reuter, P. Ellrodt, C. Heedt, W. Prost, F. J. Tegude

Journal:

Microwave and Optical Technology Letters

Année:

1996

Langue:

english

Fichier:

PDF, 420 KB

english, 1996

28

Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodes

W. Prost, U. Auer, F.-J. Tegude, C. Pacha, K. F. Goser, G. Janssen, T. van der Roer

Journal:

International Journal of Circuit Theory and Applications

Année:

2000

Langue:

english

Fichier:

PDF, 360 KB

english, 2000

29

n-GaAs/InGaP/p-GaAs Core-Multishell Nanowire Diodes for Efficient Light-to-Current Conversion

Christoph Gutsche, Andrey Lysov, Daniel Braam, Ingo Regolin, Gregor Keller, Zi-An Li, Martin Geller, Marina Spasova, Werner Prost, Franz-Josef Tegude

Journal:

Advanced Functional Materials

Année:

2012

Langue:

english

Fichier:

PDF, 1.59 MB

english, 2012

30

Circuit and application aspects of tunnelling devices in a MOBILE configuration

P. Glösekötter, C. Pacha, K. F. Goser, W. Prost, S. O. Kim, H. van Husen, T. Reimann, F. J. Tegude

Journal:

International Journal of Circuit Theory and Applications

Année:

2003

Langue:

english

Fichier:

PDF, 532 KB

english, 2003

31

InyGa1-yAs⧸GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlxGa1-xAs⧸InyGa1-yAs HFET

J. Kraus, H. Meschede, Q. Liu, W. Prost, F.J. Tegude, H. Lakner, E. Kubalek

Journal:

Journal of Crystal Growth

Année:

1993

Langue:

english

Fichier:

PDF, 264 KB

english, 1993

32

Highly strained In0.5Ga0.5P as wide-gap material on InP substrate for heterojunction field effect transistor application

F. Scheffer, A. Lindner, Q. Liu, C. Heedt, R. Reuter, W. Prost, H. Lakner, F.J. Tegude

Journal:

Journal of Crystal Growth

Année:

1994

Langue:

english

Fichier:

PDF, 581 KB

english, 1994

33

Low-pressure metalorganic vapour phase epitaxy growth of InAs/GaAs short period superlattices on InP substrates

A. Lindner, Q. Liu, F. Scheffer, M. Haase, W. Prost, F.J. Tegude

Journal:

Journal of Crystal Growth

Année:

1994

Langue:

english

Fichier:

PDF, 642 KB

english, 1994

34

InP-based heterostructure field-effect transistors with high-quality short-period (InAs)3m/(GaAs)1m superlattice channel layers

U. Auer, R. Reuter, C. Heedt, W. Prost, F.J. Tegude

Journal:

Journal of Crystal Growth

Année:

1995

Langue:

english

Fichier:

PDF, 369 KB

english, 1995

35

Investigation of leakage current behaviour of Schottky gates on InAlAs/InGaAs/InP HFET structures by a 1D model

P Ellrodt, W Brockerhoff, F.J Tegude

Journal:

Solid-State Electronics

Année:

1995

Langue:

english

Fichier:

PDF, 618 KB

english, 1995

36

Asymmetric (Schottky-ohmic) MSM photodetector

M. Porges, J. S̆afranková, T. Lalinský, I. Kostic̆, I.W. Rangelow, F.J. Tegude, D. Jäger

Journal:

Solid-State Electronics

Année:

1995

Langue:

english

Fichier:

PDF, 149 KB

english, 1995

37

Traps at interfaces betweeen GaAs n-type LPE layers and different substrates

J. Baston, F.-J. Tegude, K. Heime

Journal:

Surface Science Letters

Année:

1983

Langue:

english

Fichier:

PDF, 48 KB

english, 1983

38

Numerical analysis of InP-JFET by use of a quasi 2D-model

W. Brockerhoff, P. Ellrodt, W. Güldner, K. Heime, F.J. Tegude

Journal:

Microelectronic Engineering

Année:

1992

Langue:

english

Fichier:

PDF, 216 KB

english, 1992

39

Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET

F. Buchali, C. Heedt, W. Prost, I. Gyuro, H. Meschede, F.J. Tegude

Journal:

Microelectronic Engineering

Année:

1992

Langue:

english

Fichier:

PDF, 232 KB

english, 1992

40

Passivation of InP-based HBTs

Z. Jin, K. Uchida, S. Nozaki, W. Prost, F.-J. Tegude

Journal:

Applied Surface Science

Année:

2006

Langue:

english

Fichier:

PDF, 382 KB

english, 2006

41

Growth and characterization of AlGaAs/GaAs Bragg reflectors for non-linear optoelectronic devices

F. Scheffer, M. Joseph, W. Prost, F.J. Tegude, H. Lakner, S. Zumkley, G. Wingen, D. Jäger

Journal:

Materials Science and Engineering: B

Année:

1991

Langue:

english

Fichier:

PDF, 374 KB

english, 1991

42

Effects of deep levels and Si-doping on GaInP material properties investigated by means of optical methods

Q. Liu, U. Quedeweit, F. Scheffer, A. Lindner, W. Prost, F.J. Tegude

Journal:

Materials Science and Engineering: B

Année:

1993

Langue:

english

Fichier:

PDF, 311 KB

english, 1993

43

X-ray characterization of very thin GaxIn1−xP (x ≈ 0.5) layers grown on InP

Q. Liu, F. Scheffer, A. Lindner, H. Lakner, W. Prost, F.J. Tegude

Journal:

Materials Science and Engineering: B

Année:

1994

Langue:

english

Fichier:

PDF, 741 KB

english, 1994

44

Growth and characterization of InAlP/InGaAs double barrier RTDs

S. Neumann, P. Velling, W. Prost, F.-J. Tegude

Journal:

Journal of Crystal Growth

Année:

2004

Langue:

english

Fichier:

PDF, 188 KB

english, 2004

45

Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diode

Z. Kollonitsch, H.-J. Schimper, U. Seidel, K. Möller, S. Neumann, F.-J. Tegude, F. Willig, T. Hannappel

Journal:

Journal of Crystal Growth

Année:

2006

Langue:

english

Fichier:

PDF, 319 KB

english, 2006

46

Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (1 1 1) GaAs

I. Regolin, D. Sudfeld, S. Lüttjohann, V. Khorenko, W. Prost, J. Kästner, G. Dumpich, C. Meier, A. Lorke, F.-J. Tegude

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 595 KB

english, 2007

47

Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor–liquid–solid grown GaAs nanowires

I. Regolin, C. Gutsche, A. Lysov, K. Blekker, Zi-An Li, M. Spasova, W. Prost, F.-J. Tegude

Journal:

Journal of Crystal Growth

Année:

2011

Langue:

english

Fichier:

PDF, 985 KB

english, 2011

48

ICP-RIE etching of self-aligned InP based HBTs with Cl2/N2 chemistry

S. Topaloglu, W. Prost, F.-J. Tegude

Journal:

Microelectronic Engineering

Année:

2011

Langue:

english

Fichier:

PDF, 739 KB

english, 2011

49

Current gain increase by SiNx passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded base

Z Jin, F Otten, T Reimann, S Neumann, W Prost, F.-J Tegude

Journal:

Solid-State Electronics

Année:

2004

Langue:

english

Fichier:

PDF, 289 KB

english, 2004

50

Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNx

Z. Jin, S. Neumann, W. Prost, F.-J. Tegude

Journal:

Solid-State Electronics

Année:

2005

Langue:

english

Fichier:

PDF, 270 KB

english, 2005